Under positive bias, the Schottky diode operates in forward region. For LRS, a relatively large voltage drop across the diode is expected, and the fully conducting diode can be regarded as the series connection of an ideal diode with cut-in voltage V D0 and a dynamic resistor (r d), according to piecewise linear diode model. Based on this model, the ohmic conduction for LRS is reasonable since there are two resistors (from RRAM and diode) connected in series in the equivalent circuit. On the other hand, for HRS, the voltage drop across the

diode is small which may make its operating point less than the cut-in voltage and therefore the conduction mechanism for the diode is dominated by Schottky emission. Combined with the Schottky emission conduction for single RRAM at HRS, the same B-Raf cancer conduction mechanism is expected for 1D1R cell. To assess the ability to maintain www.selleckchem.com/products/abc294640.html the stored data for 1D1R cell, retention

performance was measured at 125°C with a read voltage of 0.1 V and the result is shown in Figure 7 which demonstrates R HRS/R LRS ratio over 2,000 with negligible degradation up to 104 s. Figure 8 shows the switching endurance for 1D1R cell by applying continuous ±1.4 V pulse of 250 ns and the current was read at 0.1 V. The sensing margin can achieve 2,286 times initially and then slightly degrade to 2,105 times after 105 cycles. This stable endurance performance implies that the 1D1R cell is robust enough to be used for practical memory applications. Figure 6 Current conduction mechanism at HRS and LRS for TaN/ZrTiO x /Ni/n + -Si-based 1D1R cell. Figure 7 Retention characteristic measured at 125°C for TaN/ZrTiO

x /Ni/n + -Si based 1D1R cell. Figure 8 Endurance performance measured by applying continuous ±1.4 V pulse trains of 250 ns for 1D1R cell. Conclusions A simplified 1D1R cell with only four layers was proposed by adopting TaN/ZrTiO x /Ni/n+-Si structure. Table 1[8, 10, 15, 16, Florfenicol 24] summarizes the main device characteristics of this work, and other RRAM structures with rectifying properties are also listed for comparison. The 1D1R cell developed in this work shows promising characteristics in terms of low operation voltage close to 1 V, tight resistance distribution for different states, large F/R ratio of 103, high R HRS/R LRS ratio of approximately 2,300, long retention time up to 104 s, and robust endurance up to 105 cycles, which are beneficial for lower power consumption, sneak current suppression, and data storage. Further optimization of the diode process is required to enhance rectifying performance which could further suppress the sneak current and make a larger array size possible. Table 1 Comparison of main device characteristics for RRAM devices with rectifying property RRAM structure Diode RHRS/RLRS ratio Set voltage (V) Reset voltage (V) F/R ratio (V) Pt/TiO x /Pt [8] Pt/TiO x /Pt ~102 @ 1 V ~4.5 V ~2 <102 @ ±0.