At the Au film front, only polishing occurred with the lightly doped Si (Figure 4d,f) in the www.selleckchem.com/products/CP-690550.html λ 2 and λ 3 solutions. Pore formation on the sidewalls of the pillars was followed by polishing. It can be imagined that a small amount of holes diffuses from the Au film to the outer surface of the nanopillars, leading to the formation of a nanoporous shell. The nanoporous shell is thicker at the upper side of the pillars (Figure 4d,f) due to the longer time for pore formation at these positions than at the ‘fresh’ bottom. For the λ 4 solution with small H2O2 concentration, the polishing effect was also suppressed (reduced pillar length in the λ

4 solution as seen in Figure 8b), and pore formation is active (as seen in selleck screening library Figure 4g and 7) due to the low current density. However, the thermodynamic driving force for pore formation is smaller in the lightly doped Si, and only few bundles of pores were observed (Figures 4g and 7). The transition from polishing to pore formation is more obvious in the lightly doped Si, while pore formation is much more active in the highly doped Si. The formation of lightly double-bent nanopillars (Figure 4e) is probably

due to the periodic depletion of H2O2 at the AZD1390 nmr etching front (Au film front), and the corresponding periodic oscillations of the cathodic current can switch the etching directions [19]. It is still unclear why the inhomogeneous etching occurred with lightly doped Si in the λ 1 solution (Additional file 1: Figures S5 and S6). However, this indicates that the current density was not homogenous over the whole Au film during etching in the λ 1 solution. The etching rate

is dependent on the value of λ and reaches its maximum at Pregnenolone λ = 0.7 for both lightly and highly doped Si (Figure 8b). Chartier et al. have systematically studied the dependence of the etching rate on λ[12]. As λ increases from small values to large values, the reaction changes from HF-concentration-controlled to H2O2-concentration-controlled, and the value of λ between 0.7 and 0.9 is optimized for high etching rate. The etching rate of highly doped Si is clearly higher than that of lightly doped Si, and this phenomenon was also observed in the work of Qu et al. [27]. This is probably due to the higher current density in the highly doped Si. However, the etching rate in this work is clearly higher than that in the work of Qu et al. [27], and this is because a much higher concentration of the total active chemicals in the solution (([HF] + [H2O2) / [H2O] = 1/5) was used here. Pillar thinning was observed in both highly and lightly doped Si after etching in the λ 1 or λ 2 solution with higher H2O2 concentration (Figures 3a and 4a,c). It is supposed that oxidation occurred, and then, pillar thinning followed by removing the formed SiO2 via HF.