In this study, 82 top-canopy leaves of Zheza205 and 86 top-canopy leaves of Zheza207 were measured in visible-NIR reflectance mode. Discriminant models were developed using principal component analysis (PCA), discriminant analysis (DA), and discriminant partial

least squares (DPLS) regression methods. After outliers detection, the samples were randomly split into two sets, one used as a calibration set (n=82) and the remaining samples as a validation set (n=82). When predicting the variety YM155 of the samples in validation set, the classification correctness of the DPLS model after optimizing spectral pretreatment was up to 93%. The DPLS model with raw spectra after multiplicative scatter correction and Savitzky-Golay filter smoothing pretreatments had the best satisfactory calibration and prediction abilities (correlation coefficient of calibration (R (c))=0.920, root mean square errors SNX-5422 cost of calibration=0.196, and root mean square errors of prediction= 0.216). The results show that visible-NIR

spectroscopy might be a suitable alternative tool to discriminate tomato plant varieties on-site.”
“Stacked multichannel or nanowire CMOS transistors are foreseen as viable options in future technology nodes. Superior electric performances and a relative immunity to short channel effects have already been demonstrated in such devices. They rely on (i) the epitaxy of SiGe/Si superlattices, (ii) the anisotropic etching of the source and drain (S/D) blocks and the channels, and (iii) the high degree of selectivity that can be achieved when laterally etching Z-DEVD-FMK nmr the SiGe sacrificial layers. The voids left by the removal of SiGe are then conformally filled by HfO2/TiN/poly-Si gates, leading to the formation of multichannel devices. Doping elements can be included in situ in the SiGe layers during the epitaxial step in order to achieve a proper S/D doping after annealing. Precise knowledge of the diffusion behavior of all species is then crucial to understand and tailor final device performance. In this work, we

investigated the properties of intrinsic or in situ doped (with B, C, or P) SiGe/Si superlattices upon annealing, using several characterization techniques, such as x-ray diffraction, x-ray reflectivity, time-of-flight-secondary ion mass spectrometry, and dark-field electron holography; as well as diffusion simulation tools such as S-PROCESS. The combined analysis and simulation approaches allowed a complete characterization of the studied structures upon annealing. In the first step, the diffusion of both germanium and dopants was observed experimentally and quantified with simulation. Their diffusion mechanisms were also studied. In the second step, the evolution of the strain distribution upon annealing was experimentally monitored and simulated to quantify the strain relaxation in such structures.