It indeed prevents any structural anomalies such as kinks and increases of the nanowires’ diameter due to the catalyst getting out of the template. This leads to a difficult control and inhomogeneities in the length of the nanowires depending on the size of the initial gold catalyst. However, a planarized silicon nanowire matrix is of great interest to achieve reproducible and homogeneous top contacts or structural processing [12]. In this paper, P-gp inhibitor we show that a combination of ultrasonic agitation,
gold-chemical etching, and silicon plasma etching enables the achievement of high-density arrays of silicon nanowires with a very good length control and homogeneity on a silicon substrate. The nanowires have a good crystalline quality, and the array
features good antireflective properties that could be useful for their implementations in devices such as detectors. Methods AAO growth templates are produced by electrochemical anodization of a thin film of AZD8931 chemical structure aluminum deposited by plasma vapor deposition on a (100)-oriented silicon substrate. Before deposition, silicon substrates are cleaned using acetone and isopropyl alcohol (IPA). Native selleck compound oxide is removed in 1% hydrofluoric acid (HF) to ensure a good electrical contact between the silicon substrate and the aluminum thin film, providing a better homogeneity during the anodization process. The initial thickness of the aluminum film has to be carefully chosen because it will determine the future length
of the nanowires. Indeed, assuming the dilatation coefficient between aluminum and alumina, a = 1.52, the final thickness of the AAO growth template mafosfamide can be calculated. In our case, typical aluminum thickness available is between 1 and 10 μm leading to an alumina up to 15 μm thick. Anodization is carried out in a homemade electrochemical cell using an electrochemically active acid such as oxalic acid (C2H2O4). The periodicity of the nanopore array is adjusted by controlling the anodization voltage and changing the acid. It can be tuned from around 30 up to 400 nm (Figure 1a) by adjusting the voltage in the range of 10 to 200 V. To achieve a good organization of the AAO template, a double anodization process [20] can be used. The nanopores are then arranged hexagonally following the aluminum grains. Nanoimprint techniques can also be used to produce perfectly hexagonal arrays of nanopores without any perturbations from the initial structure of the aluminum film [21]. Once AAO formation is achieved, the remaining barrier layer of alumina at the bottom of the pores is removed by wet chemical etching in a solution of phosphoric acid (H3PO4) at 30°C (7 wt.% ). This etching step also allows the control of the nanopores diameter by enlarging them (Figure 1b). Gold catalyst is then deposited at the bottom of each pore using electrodeposition. A current flow is applied between the substrate and an aqueous solution of gold (III) chloride (AuCl3) containing Au3+ ions.