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interests The authors declare that they have no competing interests. Authors’ contributions ZY participated in the conception of this study, managed the whole study, and drafted the manuscript. H-KK, YL, and CW carried out the fabrication and measurement. As the corresponding author, N-YK managed the main conception, guided the research, and revised the manuscript. All authors read and approved the final manuscript.”
“Background The memristor, known as the fourth fundamental circuit element, is a device whose main characteristic is the dependance of resistance according to the flux of charge passing through it and has the ability to remember its last resistance state. It was hypothesized by Chua [1] in 1971, but it was not until 2008 that it was first PIK3C2G fabricated at HP Labs [2]. Since then, the fabrication and study of memristive devices have become very popular due to their applications in information storage, non-volatile memories, neural networks, etc. [3–5] Memristive switching behavior has been observed in many metal oxides [6, 7] and attributed to the migration of oxygen vacancies within the oxide layers and grain boundaries [8, 9], but still, transport mechanisms are being studied

and different models have been suggested [7–9]. Zinc oxide (ZnO) possesses several interesting properties and has been extensively studied for its technological applications, specifically in electronic and optoelectronic devices such as photodetectors [10, 11], light-emitting diodes [12], solar cells [13, 14], and gas sensing [15]. On the other hand, porous silicon (PS)-ZnO composites have been used for white light emission [16] and to tune ZnO grain size for possible sensing applications [17]. This leads to the possibility to fabricate a tunable memristive device made of ZnO deposited on a PS template for optimizing the conditions of grain size, oxygen vacancies, defects, etc. to see more achieve tunable response from the device. The memristive behavior is demonstrated and explained through scanning electron microscopy (SEM) and photoluminescence (PL) characterization. The effect of annealing on morphology and photoluminescence response is also studied.